Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

F Zhang, C Li, Z Li, L Dong, J Zhao - Microsystems & Nanoengineering, 2023 - nature.com
Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for
changes in synaptic strength, enabling the brain to learn from experience. With the rapid …

In-memory computing with emerging memory devices: Status and outlook

P Mannocci, M Farronato, N Lepri, L Cattaneo… - APL Machine …, 2023 - pubs.aip.org
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

Two-dimensional magnetic materials for spintronic devices

M Mi, H Xiao, L Yu, Y Zhang, Y Wang, Q Cao… - Materials Today Nano, 2023 - Elsevier
Spintronics is a promising technology to develop high-speed, high-density, low-power, and
nonvolatile memory and logic devices, and thus has attracted tremendous attention …

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

[HTML][HTML] Recent progress in strong spin-orbit coupling van der Waals materials and their heterostructures for spintronic applications

S Shi, X Wang, Y Zhao, W Zhao - Materials Today Electronics, 2023 - Elsevier
The growing need for miniaturization in semiconductor devices has led to an increasing
interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically …

Field-free switching of VG-SOT-pMTJ device through the interplay of SOT, exchange bias, and VCMA effects

S Alla, V Kumar Joshi, S Bhat - Journal of Applied Physics, 2023 - pubs.aip.org
Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field (⁠ HEX⁠), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …

[图书][B] Handbook of magnetic materials

EH Brück - 2017 - books.google.com
Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching

TMJ Cham, RJ Dorrian, XS Zhang… - Advanced …, 2024 - Wiley Online Library
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and
spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der …

Shape anisotropy induced field-free switching and enhancement of dampinglike field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn …

B Wu, M Jin, Z Shao, H Fan, J Wen, H Li, C Yu, B Liu… - Physical Review B, 2023 - APS
Current-induced spin-orbit torque (SOT) switching of perpendicular magnetization requires
an additional symmetry breaking, calling for modifications of the conventional SOT devices …

Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

W Li, Z Liu, S Peng, J Lu, J Liu, X Li… - IEEE Electron …, 2024 - ieeexplore.ieee.org
The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA)
has great potential to be the next-generation writing method for low-power, fast-speed, and …