Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications
Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for
changes in synaptic strength, enabling the brain to learn from experience. With the rapid …
changes in synaptic strength, enabling the brain to learn from experience. With the rapid …
In-memory computing with emerging memory devices: Status and outlook
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …
suppress the memory bottleneck, which is the major concern for energy efficiency and …
Two-dimensional magnetic materials for spintronic devices
M Mi, H Xiao, L Yu, Y Zhang, Y Wang, Q Cao… - Materials Today Nano, 2023 - Elsevier
Spintronics is a promising technology to develop high-speed, high-density, low-power, and
nonvolatile memory and logic devices, and thus has attracted tremendous attention …
nonvolatile memory and logic devices, and thus has attracted tremendous attention …
Spin-orbit torque switching of magnetic tunnel junctions for memory applications
V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …
classes of materials and devices using electric currents, leading to novel spintronic memory …
[HTML][HTML] Recent progress in strong spin-orbit coupling van der Waals materials and their heterostructures for spintronic applications
The growing need for miniaturization in semiconductor devices has led to an increasing
interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically …
interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically …
Field-free switching of VG-SOT-pMTJ device through the interplay of SOT, exchange bias, and VCMA effects
S Alla, V Kumar Joshi, S Bhat - Journal of Applied Physics, 2023 - pubs.aip.org
Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field ( HEX), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …
field ( HEX), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …
[图书][B] Handbook of magnetic materials
EH Brück - 2017 - books.google.com
Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …
last few decades and its applications in research, notably the magnetism of several classes …
Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and
spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der …
spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der …
Shape anisotropy induced field-free switching and enhancement of dampinglike field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn …
Current-induced spin-orbit torque (SOT) switching of perpendicular magnetization requires
an additional symmetry breaking, calling for modifications of the conventional SOT devices …
an additional symmetry breaking, calling for modifications of the conventional SOT devices …
Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque
The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA)
has great potential to be the next-generation writing method for low-power, fast-speed, and …
has great potential to be the next-generation writing method for low-power, fast-speed, and …