We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Quasi-free-standing epitaxial graphene is obtained on SiC (0001) by hydrogen intercalation.
The hydrogen moves between the (6 3× 6 3) R 30° reconstructed initial carbon layer and the …

During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …

Intercalation of atomic species through epitaxial graphene on silicon carbide began only a
few years following its initial report in 2004. The impact of intercalation on the electronic …

We report on an investigation of quasi-free-standing graphene on 6H-SiC (0001) which was
prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption …

Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe
microscopy were used to investigate the electronic and structural properties of graphite …

Surface hydrogenation is a well established technique in silicon technology. It is easily
accomplished by wet-chemical procedures and results in clean and unreconstructed …

Al 2 O 3 films were deposited as alternative gate dielectric on hydrogen-terminated 6H-SiC
(0001) by atomic layer chemical vapor deposition and characterized by photoelectron …

Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits
excellent physical properties such as high electron saturated drift velocity, high breakdown …

The wide band gap semiconductor silicon carbide (SiC) is the first-choice material for power
electronic devices operating at high voltages, high temperatures, and high switching …