With its outstanding physical properties, single‐crystal diamond is the material of choice for
future power electronics and quantum devices. The later application field is based on the …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …

This paper reviews recent progress in diamond radiation detectors. Diamond is an ultra-
wide gap (5.5 eV) semiconducting material which has several ideal properties for radiation …

Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

Diamond has emerged as the desirable semiconducting material in radiation detectors
owing to its extremely wide band gap that favors certain outstanding properties. Such …

Aiming at the hot spots heat dissipation in power integrated circuits and challenging growth
problems of large size single crystal diamond, a novel heat sink strategy is proposed, based …

Dislocations are considered crucial linear defects in the synthesis of heteroepitaxial single
crystal diamond. Minimizing the dislocation density is a significant challenge for using …

A lower dislocation density substrate is essential for realizing high performance in single-
crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial …

Nearly a quarter of a century ago, we wrote a review paper about the very new technology of
chemical vapour deposition of diamond thin films. We now update this review and bring the …