The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design
J Rass, HK Cho, M Guttmann, D Prasai… - Applied Physics …, 2023 - pubs.aip.org
AlGaN-based far-UVC light emitting diodes (LEDs) with an emission wavelength of 233 nm
were fabricated in the form of micro-LED arrays with emitter diameters ranging from 1.5 to 50 …
were fabricated in the form of micro-LED arrays with emitter diameters ranging from 1.5 to 50 …
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV-
LEDs) emitting at 265 nm grown on stripe-patterned high-temperature annealed (HTA) …
LEDs) emitting at 265 nm grown on stripe-patterned high-temperature annealed (HTA) …
[HTML][HTML] Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
A Knauer, T Kolbe, S Hagedorn, J Hoepfner… - Applied Physics …, 2023 - pubs.aip.org
High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
We show that the often observed efficiency droop in AlGaN quantum well heterostructures is
an internal carrier loss process, analogous to the InGaN system. We attribute this loss …
an internal carrier loss process, analogous to the InGaN system. We attribute this loss …
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
M Guttmann, F Mehnke, B Belde, F Wolf… - Japanese Journal of …, 2019 - iopscience.iop.org
The influence of aluminum mole fraction of Al x Ga 1-x N/Al y Ga 1-y N multiple quantum
wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external …
wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external …