Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …

In this work, we show that the-Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …

In this letter, high-performance p-NiO/β-Ga 2 O 3 heterojunction diodes (HJDs) with
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …

In this Letter, high-performance vertical NiO/β-Ga 2 O 3 p–n heterojunction diodes without
any electric field managements were reported. The devices show a low leakage current …

We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …

In this Letter, we report a high-performance NiO/β-Ga 2 O 3 pn heterojunction diode with an
optimized interface by annealing. The electrical characteristics of the pn diode without …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

In this article, we report on demonstrating the first vertical β-Ga 2 O 3 junction barrier
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …