Voltage-controlled MRAM for working memory: Perspectives and challenges
Magnetic random access memory (MRAM) has been widely studied for future nonvolatile
working memory candidate. However, the mainstream current (spin transfer torque, STT or …
working memory candidate. However, the mainstream current (spin transfer torque, STT or …
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …
Area-efficient SOT-MRAM with a Schottky diode
This letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
Spintronics-based devices to circuits: Perspectives and challenges
S Verma, AA Kulkarni… - IEEE Nanotechnology …, 2016 - ieeexplore.ieee.org
The science of using the electron's spin in electronic devices is popularly known as
spintronics. Researchers have been exploring spintronics to achieve nonvolatility, low …
spintronics. Researchers have been exploring spintronics to achieve nonvolatility, low …
High performance and energy-efficient on-chip cache using dual port (1R/1W) spin-orbit torque MRAM
This paper proposes a dual (1R/1W) port spin-orbit torque magnetic random access memory
(1R/1W SOT-MRAM) for energy efficient on-chip cache applications. Our proposed dual port …
(1R/1W SOT-MRAM) for energy efficient on-chip cache applications. Our proposed dual port …
Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect
We introduce a differential planar Hall effect method that enables the experimental study of
spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device …
spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device …
Hybrid spin-orbit torque/spin-transfer torque-based multibit cell for area-efficient magnetic random access memory
Spin-orbit torque (SOT) devices for magnetic random access memory (MRAM) are promising
due to their higher endurance, faster switching speed, and higher energy efficiency …
due to their higher endurance, faster switching speed, and higher energy efficiency …
Charge-recycling-based redundant write prevention technique for low-power SOT-MRAM
G Kang, J Park - IEEE Transactions on Very Large Scale …, 2019 - ieeexplore.ieee.org
In spin-orbit torque magnetic random access memory (SOT-MRAM), as write energy is much
larger than read energy, writing data to memory only when the new data is different from the …
larger than read energy, writing data to memory only when the new data is different from the …
Energy-efficient differential spin hall MRAM-based 4-2 magnetic compressor
The compressors are widely used as bit compressing cells having key applications with
multi-operand addition and multiplication hardware. As the CMOS technology scales down …
multi-operand addition and multiplication hardware. As the CMOS technology scales down …
High-density 1R/1W dual-port spin-transfer torque MRAM
Y Seo, KW Kwon - Micromachines, 2022 - mdpi.com
Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable
features, such as non-volatility, high integration density, and near-zero leakage power …
features, such as non-volatility, high integration density, and near-zero leakage power …