Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …
and energy-related technologies, on the basis of their intriguing properties including …
Charge steering in heterojunction photocatalysis: general principles, design, construction, and challenges
Steering charge kinetics is a key to optimizing quantum efficiency. Advancing the design of
photocatalysts (ranging from single semiconductor to multicomponent semiconductor …
photocatalysts (ranging from single semiconductor to multicomponent semiconductor …
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II pn Heterojunctions
Engineering oxide interfaces with defined electronic band structures is of vital importance for
designing all-oxide devices with controllable multifunctionalityand improved performance …
designing all-oxide devices with controllable multifunctionalityand improved performance …
Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p–n Heterojunction
J Zhang, S Han, M Cui, X Xu, W Li, H Xu… - ACS Applied …, 2020 - ACS Publications
Ga2O3 is emerging as an interesting semiconductor for high-power electronics and solar-
blind ultraviolet photodetectors because of its ultrawide bandgap and high breakdown field …
blind ultraviolet photodetectors because of its ultrawide bandgap and high breakdown field …
Ternary Oxide CuWO4/BiVO4/FeCoOx Films for Photoelectrochemical Water Oxidation: Insights into the Electronic Structure and Interfacial Band Alignment
Photoelectrochemical (PEC) water oxidation using ternary oxide systems has been
considered a promising approach for investigating the effective utilization of sunlight and the …
considered a promising approach for investigating the effective utilization of sunlight and the …
Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films
Hematite (Fe2O3) is a well-known oxide semiconductor suitable for photoelectrochemical
(PEC) water splitting and industry gas sensing. It is widely known that Sn doping of Fe2O3 …
(PEC) water splitting and industry gas sensing. It is widely known that Sn doping of Fe2O3 …
Optimization of NiO/β-Ga2O3 Heterojunction Diodes for High-Power Application
C Liao, X Lu, T Xu, P Fang, Y Deng… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This work presents the optimization of a NiO/-Ga2O3 heterojunction diode (HJD) by
adjusting the structural parameters of the NiO layer. A rapid thermal annealing (RTA) …
adjusting the structural parameters of the NiO layer. A rapid thermal annealing (RTA) …
Electronic Structure and Interface Energetics of CuBi2O4 Photoelectrodes
FE Oropeza, NY Dzade, A Pons-Martí… - The Journal of …, 2020 - ACS Publications
CuBi2O4 exhibits significant potential for the photoelectrochemical (PEC) conversion of
solar energy into chemical fuels, owing to its extended visible-light absorption and positive …
solar energy into chemical fuels, owing to its extended visible-light absorption and positive …
Tuning the electronic structure of NiO via Li doping for the fast oxygen evolution reaction
Transition metal oxides are being actively pursued as low-cost electrocatalysts for the
oxygen evolution reaction (OER) in many electrochemical energy devices. A fundamental …
oxygen evolution reaction (OER) in many electrochemical energy devices. A fundamental …