[图书][B] Random telegraph signals in semiconductor devices
E Simoen, C Claeys - 2016 - iopscience.iop.org
Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
Complex random telegraph noise (RTN): What do we understand?
As the generally-accepted simple understanding, the random telegraph noise (RTN)
induced by a single trap is explained by the “normal” two-state trap model, and the RTNs …
induced by a single trap is explained by the “normal” two-state trap model, and the RTNs …
The relevance of trapped charge for leakage and random telegraph noise phenomena
The current understanding of key reliability phenomena such as leakage and Random
Telegraph Noise (RTN) is still incomplete. Models exist that explain simple cases (2-level …
Telegraph Noise (RTN) is still incomplete. Models exist that explain simple cases (2-level …
New insights into the amplitude of random telegraph noise in nanoscale MOS devices
Amplitude distribution of random telegraph noise (RTN) in nanoscale CMOS technology is
an open question, with both lognormal and exponential distributions widely reported in …
an open question, with both lognormal and exponential distributions widely reported in …
Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices
In this paper, the amplitude (ΔI d/I d) distribution of random telegraph noise (RTN) induced
by each trap in nanoscale devices is investigated based on the statistical experimental …
by each trap in nanoscale devices is investigated based on the statistical experimental …
Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
J Martin-Martinez, J Diaz-Fortuny… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
Time-Dependent Variability (TDV) phenomena represent a serious concern for device and
circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) …
circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) …
Statistical analysis and modeling of random telegraph noise based on gate delay measurement
AKMM Islam, T Nakai, H Onodera - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We propose a characterization methodology for random telegraph noise (RTN) based on
gate delay measurement. To convert delay change to MOSFET threshold voltage fluctuation …
gate delay measurement. To convert delay change to MOSFET threshold voltage fluctuation …
Electrostatic coupling and identification of single-defects in GaN/AlGaN Fin-MIS-HEMTs
Charge trapping effects are considered as one of the most severe reliability issues in gallium
nitride (GaN)/aluminium gallium nitride (AlGaN) metal-insulator-semiconductor HEMTs …
nitride (GaN)/aluminium gallium nitride (AlGaN) metal-insulator-semiconductor HEMTs …
Chaotic behavior of random telegraph noise in nanoscale UTBB FD-SOI MOSFETs
Low frequency noise in nanoscale fully depleted ultra-thin body and buried oxide n-
MOSFETs is not as random (stochastic) as it appears to be. The fluctuation of the drain …
MOSFETs is not as random (stochastic) as it appears to be. The fluctuation of the drain …
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs
In this paper, based on the complex random telegraph noise (RTN) data in FinFETs, the
impacts of the trap coupling effect on RTN amplitude are studied statistically. The coupling …
impacts of the trap coupling effect on RTN amplitude are studied statistically. The coupling …