Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid
The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a
two-step top-down process consisting of an inductively coupled plasma reactive ion etch …
two-step top-down process consisting of an inductively coupled plasma reactive ion etch …
Breakthroughs in semiconductor Lasers
The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented.
Achievements including the impressive advances in high-speed lasers with low pJ/bit …
Achievements including the impressive advances in high-speed lasers with low pJ/bit …
Chemical Wet Etching of AL (x) GA (1-x) N (0≤ x≤ 1)) Nanostructures
BA Kazanowska - 2021 - search.proquest.com
Abstract Al (x) Ga (1-x) N is a leading candidate for current and future ultra-wide bandgap
electronic and optoelectronic applications. However, three-dimensional (3D) etch …
electronic and optoelectronic applications. However, three-dimensional (3D) etch …
Microstructural characterisation of novel nitride nanostructures using electron microscopy
J Severs - 2014 - ora.ox.ac.uk
Novel semiconductor nanostructures possess a range of notable properties that have the
potential to be harnessed in the next generation of optical devices. Electron microscopy is …
potential to be harnessed in the next generation of optical devices. Electron microscopy is …