Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing
Memristive devices based on two-dimensional (2D) semiconducting materials have
emerged as highly promising neuromorphic devices due to their intrinsic atomic body and …
emerged as highly promising neuromorphic devices due to their intrinsic atomic body and …
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
Effects of measurement temperature and metal thickness on Schottky diode characteristics
Ti Schottky contact (SC) metal with 50 nm and 100 nm thickness on n-GaAs substrate was
sputtered by DC magnetron into vacuum unite. It was checked whether the diode …
sputtered by DC magnetron into vacuum unite. It was checked whether the diode …
Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
The temperature dependence of the electrical properties of the Schottky barrier contact
W/4H-SiC is studied in term of the Werner's model assuming a Gaussian distribution of the …
W/4H-SiC is studied in term of the Werner's model assuming a Gaussian distribution of the …
A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S: DLC)/p-Si/Au (MIS)-type …
AE Tezcan, AF Vahid, M Ulusoy, Ş Altındal - Physica B: Condensed …, 2024 - Elsevier
In this work, the Al/(S: DLC)/p-Si/Au Schottky structures were fabricated, and the real and
imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex …
imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex …
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S: DLC)/p-Si (MIS) structures
Abstract Complex dielectric (ε*= ε′− jε ″)/electric modulus (M*= M′+ jM ″), loss tangent
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer
Schottky Barrier Diodes have been studied largely in literature for their superior properties
over pn barriers in a wide range of components like solar cells, sensors, gate stacks of FETs …
over pn barriers in a wide range of components like solar cells, sensors, gate stacks of FETs …
TiO2 Katkılı Elmas-Benzeri Karbon Filmlerin Yeni Bir Çözeltiden Üretilmesi ve Karakterizasyonları
Elmas-benzeri karbon (EBK) filmler gösterdikleri mekanik ve fiziksel özelliklerinden dolayı
en çok çalışılan kaplama malzemeleridir. Bu filmlerin özelliklerinin iyileştirilmesi için üretim …
en çok çalışılan kaplama malzemeleridir. Bu filmlerin özelliklerinin iyileştirilmesi için üretim …