[图书][B] Infrared and terahertz detectors

A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

N Baril, A Brown, P Maloney, M Tidrow… - Applied Physics …, 2016 - pubs.aip.org
Mid-wavelength infrared nBn photodetectors based on bulk InAs x Sb 1-x absorbers with a
greater than 5 μm cutoff grown on GaSb substrates are demonstrated. The extended cutoff …

Nature allows high sensitivity thermal imaging with type-I quantum wells without optical couplers: a grating-free quantum well infrared photodetector with high …

C Besikci - IEEE Journal of Quantum Electronics, 2021 - ieeexplore.ieee.org
Quantum well infrared photodetectors (QWIPs) have facilitated thermal imagers with
excellent pixel operability, uniformity and stability. The main disadvantage of the standard …

Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

VM Cowan, CP Morath, JE Hubbs, S Myers… - Applied Physics …, 2012 - pubs.aip.org
The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer
superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The …

Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system

Ł Ciura, A Kolek, W Gawron… - Metrology and …, 2014 - yadda.icm.edu.pl
The paper presents the method and results of low-frequency noise measurements of
modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based …

Transimpedance Amplifier for Noise Measurements in Low-Resistance IR Photodetectors

K Achtenberg, G Scandurra, J Mikołajczyk, C Ciofi… - Applied Sciences, 2023 - mdpi.com
This paper presents the design and testing of an ultra-low-noise transimpedance amplifier
(TIA) for low-frequency noise measurements on low-impedance (below 1 kΩ) devices, such …

Noise characteristics of InAs/GaSb superlattice infrared photodiodes

A Wörl, P Kleinow, R Rehm, J Schmitz… - … status solidi c, 2013 - Wiley Online Library
A sophisticated noise measurement setup employing a switching unit to measure statistically
relevant numbers of InAs/GaSb superlattice photodiodes has been developed. The noise …

MWIR barrier infrared detectors with greater than 5µm cutoff using bulk InAsSb grown on GaSb substrates

N Baril, A Brown, D Zuo, M Tidrow… - Infrared Technology …, 2017 - spiedigitallibrary.org
Mid-wavelength infrared photodetectors incorporated into a unipolar barrier architecture with
a bulk InAs x Sb 1-x absorber and an AlSb barrier layer are demonstrated. An extended …

Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays

M Razeghi, A Haddadi, G Chen… - … and Applications XL, 2014 - spiedigitallibrary.org
Low-frequency noise has been studied in a mid-wavelength infrared InAs/GaSb type-II
superlattice-based focal plane array. Low-frequency noise is observed under reverse bias …

Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector

LA Treider, CP Morath, VM Cowan, ZB Tian… - Infrared Physics & …, 2015 - Elsevier
Abstract Type-II Strained Layer Superlattice (T2SLS) infrared photodetectors have been in
development over the last decade. T2SLS offers a theoretically longer Auger recombination …