The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical
methods currently used for SiC films' growth are discussed and their advantages and …

A review of recent advances in the field of epitaxial growth of SiC films on Si by means of a
new method of epitaxial substitution of film atoms for substrate atoms has been presented …

For the first time, zinc oxide epitaxial films on silicon were grown by the method of atomic
layer deposition at a temperature T= 250° C. In order to avoid a chemical reaction between …

The paper reviews the latest advances in the growth of epitaxial SiC films on Si by the
coordinated atomic substitution method. The conceptual issues and procedure of the new …

A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main
classical methods used at present to grow SiC films on silicon are described. Their …

Abstract Analysis of the literature data on the reasons for the development of mechanical
stresses in epitaxial, polycrystalline, and amorphous films during their formation and under …

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal
via substitution reaction with carbon monoxide gas. As an example, the Si (1 0 0) surface is …

This review represents the last achievements in synthesis of epitaxial layers of gallium
nitride (GaN) on silicon (Si) substrate. The basic physical, crystallography and physical …

The structural and mechanical properties of gallium oxide films grown on silicon
crystallographic planes (001),(011), and (111) with a buffer layer of silicon carbide are …

The effect of the Silicon (Si) substrate conductivity type on the morphology and polytypic
composition of silicon carbide (SiC) films grown on these substrates has been theoretically …