The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Basically all properties of semiconductor devices are influenced by the distribution of point
defects in their active areas. This book contains the first comprehensive review of the …

We report first-principles total energy calculations of interaction of nitrogen in silicon with
silicon self-interstitials. Substitutional nitrogen captures a silicon interstitial with 3.5 eV …

In this Letter, we present ab initio results identifying a new diffusion path for the nitrogen pair
complex in silicon, resulting in an effective diffusivity of 67 exp⁡(-2.38 eV/k T) cm 2/s. This …

Reported nitrogen diffusion profiles are analyzed to deduce the basic properties of the
N2/N1 community of nitrogen dimers and monomers: the species diffusivities, the …

Nitrogen implantation is commonly used in multigate oxide thickness processing for mixed
signal complementary metal-oxide-semiconductor and System on a Chip technologies …

The locking of dislocations by nitrogen impurities in nitrogen-doped FZ-grown (NFZ) silicon
crystals was investigated as a function of time in the temperature range 550–830° C. It was …

The second half of the twentieth century and the beginning of the twenty? rst have been
characterized by the most impressive industrial revolution ever seen. In-proximately …

First-principles pseudopotential calculations have been performed to investigate an
atomistic model of nitrogen diffusion in silicon crystal. The calculated activation energy of the …

Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits.
The interaction between nitrogen (N) and interstitial oxygen (O i) atoms in the low …