Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

Memristors based on 2D materials as an artificial synapse for neuromorphic electronics

W Huh, D Lee, CH Lee - Advanced materials, 2020 - Wiley Online Library
The memristor, a composite word of memory and resistor, has become one of the most
important electronic components for brain‐inspired neuromorphic computing in recent years …

Hybrid 2D–CMOS microchips for memristive applications

K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng… - Nature, 2023 - nature.com
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …

Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing

SO Park, H Jeong, J Park, J Bae, S Choi - Nature Communications, 2022 - nature.com
Neuromorphic computing, a computing paradigm inspired by the human brain, enables
energy-efficient and fast artificial neural networks. To process information, neuromorphic …

Memristor-induced hyperchaos, multiscroll and extreme multistability in fractional-order HNN: Image encryption and FPGA implementation

X Kong, F Yu, W Yao, S Cai, J Zhang, H Lin - Neural Networks, 2024 - Elsevier
Fractional-order differentiation (FOD) can record information from the past, present, and
future. Compared with integer-order systems, FOD systems have higher complexity and …

Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

W Banerjee, A Kashir, S Kamba - Small, 2022 - Wiley Online Library
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

A chemically mediated artificial neuron

T Wang, M Wang, J Wang, L Yang, X Ren, G Song… - Nature …, 2022 - nature.com
Brain–machine interfaces typically rely on electrophysiological signals to interpret and
transmit neurological information. In biological systems, however, neurotransmitters are …