The past decade has witnessed dramatic progress related to various aspects of emergent
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …

Abstract Two-dimensional (2D) layered materials with a non-centrosymmetric structure
exhibit great potential for nano-scale electromechanical systems and electronic devices …

Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Abstract Domain walls may play an important role in future electronic devices, given their
small size as well as the fact that their location can be controlled. Here, we report the …

The growth and characterization of functional oxide thin films that are ferroelectric, magnetic,
or both at the same time are reviewed. The evolution of synthesis techniques and how …

Photoelectric properties of multiferroic BiFeO3, such as large photovoltages exceeding
several times the bandgap or switchable photocurrents, have recently generated much …

Abstract Multiferroics, where (anti-) ferromagnetic, ferroelectric and ferroelastic order
parameters coexist,,,,, enable manipulation of magnetic ordering by an electric field through …

The utility of ferroelectric materials stems from the ability to nucleate and move polarized
domains using an electric field. To understand the mechanisms of polarization switching …

Conventional CMOS based logic and magnetic based data storage devices require the
shuttling of electrons for data processing and storage. As these devices are scaled to …