Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

Abstract Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent
electrostatic control capability, are widely regarded as advantageous channels for the …

The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has
been fundamental to explore new phononic and electronic functionalities. We here exploit a …

Fabricating ultrathin silicon (Si) channels down to critical dimension (CD)< 10 nm, a key
capability to implementing cutting‐edge microelectronics and quantum charge‐qubits, has …

Changing the direction of horizontal nanowires to extend them in the z direction and grow
obliquely has important practical significance for achieving higher density integration and …

Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the
construction of versatile 3D nanocomplexes, while the major challenge is to achieve a …

High mobility, scalable and even transparent thin-film transistors (TFTs) are always being
pursued in the field of large area electronics. While excimer laser-beam-scanning can …

Graphene nanoribbons are ideal candidates to serve as highly conductive, flexible, and
transparent interconnections, or the active channels for nanoelectronics. However …

The challenge of nanowire assembly is still one of the major obstacles toward their efficient
integration into functional systems. One strategy to overcome this obstacle is the guided …

Building 3D electronics represents a promising method for the integration of more
functionalities into a given footprint. To this end, stacked multilevel silicon nanowires …