Synthesis of wafer‐scale graphene with chemical vapor deposition for electronic device applications
The first isolation of graphene opens the avenue for new platforms for physics, electronic
engineering, and materials sciences. Among several kinds of synthesis approaches …
engineering, and materials sciences. Among several kinds of synthesis approaches …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Negative capacitance transistors
JC Wong, S Salahuddin - Proceedings of the IEEE, 2018 - ieeexplore.ieee.org
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …
significant attention from many researchers around the world. The negative capacitance …
Negative differential resistance in negative capacitance FETs
We report the investigation of negative differential resistance (NDR) in negative capacitance
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
Influence of body effect on sample-and-hold circuit design using negative capacitance FET
Negative capacitance FET (NCFET) has become a research topic of interest in recent years
due to its interesting properties. It has the ability to retain the polarization state even in the …
due to its interesting properties. It has the ability to retain the polarization state even in the …
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors
T Yu, W Lü, Z Zhao, P Si, K Zhang - Microelectronics Journal, 2021 - Elsevier
In this study, the negative drain-induced barrier lowering (DIBL) and negative differential
resistance (NDR) effects are investigated in detail in negative-capacitance field-effect …
resistance (NDR) effects are investigated in detail in negative-capacitance field-effect …
Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx
We report a comparative investigation of the negative capacitance (NC) Ge pFETs with
different thicknesses of HfZrO x (HZO). Although the NC transistors with 6.6 nm HZO exhibit …
different thicknesses of HfZrO x (HZO). Although the NC transistors with 6.6 nm HZO exhibit …
[HTML][HTML] Ferroelectric devices for intelligent computing
Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …
development of the computing capability. In the post-Moore era, emerging logic and storage …
Negative capacitance oxide thin-film transistor with sub-60 mV/decade subthreshold swing
In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor
(NC-OTFT) based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HfZrO) film. The buried-gated …
(NC-OTFT) based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HfZrO) film. The buried-gated …