We present a detailed semi-analytical investigation of the transient dynamics of gate-all-
around (GAA) charge-trap memories. To this aim, the Poisson equation is solved in …

This paper presents a detailed investigation of charge-trap memory programming by means
of 3-D TCAD simulations accounting both for the discrete and localized nature of traps and …

In the last decade, important technology solutions have been proposed to scale down Flash
memory devices beyond the 30nm node. The most important innovations are the …

Recently, three-dimensional FLASH memory with multi-level cell characteristics has
attracted increasing attention to enhance the capabilities of artificial intelligence (AI) by …

Al 2 O 3-based dielectrics are currently considered as promising materials to use in
nonvolatile memories. The electron trap density in this material is much higher than in …

This paper presents an active control of capacitance-voltage (CV) characteristic for MOS
capacitors based on sliding-mode control and sigma-delta modulation. The capacitance of …

We present a new algorithm for the exact solution of the system of equations describing
charge trapping and transport across the dielectric stack of nitride-based charge trapping …

This paper presents the circuit topology of a second order sigma-delta control of charge
trapping for MOS capacitors. With this new topology it is possible to avoid the presence of …

Hole trapping was studied in the Al 2 O 3-SiO 2 (AO) dielectric stack developed for HV
CMOS and nonvolatile memory (NVM) applications. Pt electrode blocked the electron …

Charge trapping (CT) memories could be a promising technology option for further NAND
Flash scaling. The assessment of the scalability limits and ultimate performances of this …