The emergence of metamaterials and their continued prosperity have built a powerful
working platform for accurately manipulating the behavior of electromagnetic waves …

The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

Offering a single volume reference for high frequency semiconductor devices, this handbook
covers basic material characteristics, system level concerns and constraints, simulation and …

This paper presents an analytical model for determining the dc characteristics of GaAs-
OPFET (optically controlled field effect transistor). The model takes into account all the major …

This paper presents an analytical model for a terahertz wave-controlled graphene-gated
semiconductor field-effect transistor (GSFET) operated in the terahertz regime. Analysis has …

Abstract Opto-Electronic Integrated Circuit (OEIC) receivers offer greater advantages over
other discrete devices in Visible Light Communication (VLC). Use of Optical Field-Effect …

The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field
Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same …

A numerical model of an ion-implanted GaAs optical field-effect transistor (OPFET) has been
presented. The model is a physics-based one, and overcomes the major limitations of the …

We estimate the UV (Ultraviolet) characteristics of the buried-gate GaN OPFET (Optical Field
Effect Transistor) models and analyze the results based on the photoconductive and the …

High gain-bandwidth product and visible/UV contrast photodetectors are vital in Visible Light
Communication (VLC) and Ultraviolet (UV) reflectance imaging applications respectively …