Control of defect processes in photovoltaic materials is essential for realizing high-efficiency
solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the …

Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …

Over four decades ago, pulsed-laser melting, or pulsed-laser annealing as it was termed at
that time, was the subject of intense study as a potential advance in silicon device …

Following recent successful demonstrations of enhanced infrared absorption in Au-
hyperdoped Si, there has been strong interest in fabricating other metal-hyperdoped Si …

Silicon scraps, as the by-product of solar cells, have received more and more attention for its
recycling with the continuing development of the cleaner production. However, hard …

The control of impurities in semiconductor materials has been a critical issue since the
invention of the transistor due to their severe impact on the electrical device performance …

Hyperdoped silicon with deep level impurities has attracted much research interest due to its
promising optical and electrical properties. In this work, single crystalline silicon …

Owing to their strong interaction with carriers, early 3 d-row (Ti, V, and Cr) and 4 d-row (Zr,
Nb, and Mo) transition metals (TMs) are undesired contaminants in solar-and electronic …

The move toward lower cost sources of solar silicon has intensified the efforts to investigate
the possibilities of passivating or reducing the recombination activity caused by deep states …

Excess minority carriers create boron-related recombination centers that degrade the
efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced …