Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can
absorb photons with energy lower than the bandgap of the semiconductor through the half …

The effect of a Bi supply on the development of InAs/GaAs (0 0 1) QDs has been structurally
explored in two growth temperature regimes, one for Bi alloying (380° C) and another for …

We present a quantitative analysis of Sb segregation in ultrathin GaAsSb films (1–20 ML)
grown with soaking/desorption methods. Sb soaking advances Sb incorporation almost to …

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …

We demonstrate the correlative research on the multi-stacked vertically coupled InAs
quantum dots (VCQDs) capped by 15 nm combinational capping layer of In (0.21) Al (0.21) …

The model of a spherical quantum dot with several donor impurities on its surface is
suggested. The electron energy spectra are studied as a function of the quantum dot radius …

The development of novel nanomaterials became a subject of intensive research, due to
high market needs for innovative applications in virtually all aspects of life. In particular, the …

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received
considerable attention due to improved photovoltaic performance in QD solar cells …

Today performance and operational efficiency of computer systems on digital image
processing are exacerbated owing to the increased complexity of image processing. It is …

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received
considerable attention due to improved photovoltaic performance in QD solar cells …