Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
H Hirayama, N Maeda, S Fujikawa… - Japanese Journal of …, 2014 - iopscience.iop.org
In this paper, recent advances in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes
(LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by developing …
(LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by developing …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
We show that the often observed efficiency droop in AlGaN quantum well heterostructures is
an internal carrier loss process, analogous to the InGaN system. We attribute this loss …
an internal carrier loss process, analogous to the InGaN system. We attribute this loss …
Recent progress in AlGaN deep-UV LEDs
H Hirayama - Light-Emitting Diode: An Outlook on the Empirical …, 2018 - books.google.com
AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have a wide variety of potential
applications, including uses for sterilization, water purification, and UV curing and in the …
applications, including uses for sterilization, water purification, and UV curing and in the …
High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)
B Nikoobakht, RP Hansen, Y Zong, A Agrawal… - Science …, 2020 - science.org
“Efficiency droop,” ie, a decline in brightness of light-emitting diodes (LEDs) at high electrical
currents, limits the performance of all commercial LEDs and has limited the output power of …
currents, limits the performance of all commercial LEDs and has limited the output power of …
[HTML][HTML] An AlGaN tunnel junction light emitting diode operating at 255 nm
We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV)
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
[HTML][HTML] Electron overflow of AlGaN deep ultraviolet light emitting diodes
We have studied the design, epitaxy, and performance characteristics of deep ultraviolet
(UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization …
(UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization …
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology …
C Frankerl, MP Hoffmann, F Nippert, H Wang… - Journal of Applied …, 2019 - pubs.aip.org
We report on a systematic study of the determination of the internal quantum efficiency (IQE)
in AlGaN-based multiple-quantum-well (MQW) structures using different optical evaluation …
in AlGaN-based multiple-quantum-well (MQW) structures using different optical evaluation …
Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to∼ 1 W
We demonstrate 1 mm 2 blue light-emitting diodes with a negligible efficiency droop up to∼
1 W. LEDs with 12-to 14-nm-thick single quantum wells were grown by metalorganic …
1 W. LEDs with 12-to 14-nm-thick single quantum wells were grown by metalorganic …
The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes
The rates of non-radiative Auger recombination (AR) and radiative recombination (RR) in
polar GaN/AlN quantum wells (QWs) are calculated. It is shown that in these QWs the …
polar GaN/AlN quantum wells (QWs) are calculated. It is shown that in these QWs the …