: a physical model for RRAM devices simulation
In the last few years, resistive random access memory (RRAM) has been proposed as one of
the most promising candidates to overcome the current Flash technology in the market of …
the most promising candidates to overcome the current Flash technology in the market of …
Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition
We investigate the use and performance of the quasi-static memdiode model (QMM) when
incorporated into large cross-point arrays intended for pattern classification tasks. Following …
incorporated into large cross-point arrays intended for pattern classification tasks. Following …
Electrical breakdown in thin Si oxide modeled by a quantum point contact network
GW Holloway, O Ivanov, R Gavrilov… - … on Electron Devices, 2016 - ieeexplore.ieee.org
The voltage and temperature dependence of post-breakdown (BD) conduction in SiO 2 non-
volatile memory bitcells is investigated. A model for charge transport in disordered systems …
volatile memory bitcells is investigated. A model for charge transport in disordered systems …
[图书][B] Analysis and modeling of filamentary conduction in Hf0₂-based structures
A Rodríguez Fernández - 2018 - ddd.uab.cat
We are currently facing a revolution in the fields of microelectronics and information
technologies that will surely affect our way of life in the years to come. In this regard, the …
technologies that will surely affect our way of life in the years to come. In this regard, the …