This paper summarizes key findings in single-photon generation from deep level defects in
silicon carbide (SiC) and highlights the significance of these individually addressable …

Point defects in semiconductors are emerging as an important contender platform for
quantum technology (QT) applications, showing potential for quantum computing …

In current long-distance communications, classical information carried by large numbers of
particles is intrinsically robust to some transmission losses but can, therefore, be …

Color centers in wide-bandgap semiconductors are attractive systems for quantum
technologies since they can combine long-coherent electronic spin and bright optical …

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many
industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit …

Silicon carbide (SiC) offers a unique opportunity to realize advanced quantum‐based
devices and sensors. The role of paramagnetic defects in this material to achieve optical and …

Optically addressable point defects in semiconductor materials have been identified as
promising single-photon sources and spin qubits in quantum information technologies. The …

In this review paper, we list the basic properties of the most relevant point defect quantum
bits or quantum bit candidates that have been harnessed to realize single photon sources …

In this work, we report on the addition of GeH 4 gas during homoepitaxial growth of 4H-SiC
by chemical vapor deposition. Ge introduction does not affect dramatically the surface …

The optical signature of niobium in the low-temperature photoluminescence spectra of three
common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously …