This article addresses the influence of parameters spread on transient current distribution
among parallel-connected silicon carbide (SiC) mosfets and proposes a chips classification …

Device parameter mismatch generates current imbalance between parallel devices. In
severe cases, the device that withstands excessive current may incur overcurrent failure …

This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …

Active gate drivers lend themselves well to reducing over-and undervoltages during the
commutations of hard switched power transistors, as well as to damping resonances …

As one significant component of the Electric‐Driven System of xEV (all types of electric
vehicles), motor controllers have been widely applied and researched. However, the …

The multichip power module is a popular application for large-capacity and high-frequency
converters. However, the existence of an asymmetric circuit layout has a significant influence …

In this paper, a multi-step packaging (MSP) concept for series-connected SiC-MOSFETs is
analyzed. The parasitic capacitance generated by the dielectric isolation of each device in …

Silicon carbide MOSFETs have current ratings that are not sufficiently high to be used in
high‐power converters. It is necessary to connect several MOSFETs in parallel in order to …

Overcurrent failure caused by imbalanced current distribution is one of the universal failure
forms of the SiC MOSFET module. The current sharing of parallel SiC MOSFETs is an …

Power semiconductors show a significant variation in their electrical characteristics
attributed to fluctuations during their fabrication process. This can lead to critical voltage and …