Optical and Structural Properties of Si Nanocrystals in SiO2 Films
T Nikitin, L Khriachtchev - Nanomaterials, 2015 - mdpi.com
Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For
the SiO x (x< 2) films annealed above 1000° C, the Raman signal of Si-nc and the …
the SiO x (x< 2) films annealed above 1000° C, the Raman signal of Si-nc and the …
[图书][B] Silicon nanophotonics: basic principles, present status, and perspectives
L Khriachtchev - 2016 - books.google.com
Photonics is a key technology of this century. The combination of photonics and silicon
technology is of great importance because of the potentiality of coupling electronics and …
technology is of great importance because of the potentiality of coupling electronics and …
Thermodynamic theory of phase separation in nonstoichiometric Si oxide films induced by high-temperature anneals
A Sarikov - Nanomanufacturing, 2023 - mdpi.com
High-temperature anneals of nonstoichiometric Si oxide (SiOx, x< 2) films induce phase
separation in them, with the formation of composite structures containing amorphous or …
separation in them, with the formation of composite structures containing amorphous or …
Size confinement of Si nanocrystals in multinanolayer structures
Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of
alternating sub-stoichiometric SiO x and SiO2 nanolayers. It is frequently claimed that in …
alternating sub-stoichiometric SiO x and SiO2 nanolayers. It is frequently claimed that in …
Distribution of boron and phosphorus and roles of co-doping in colloidal silicon nanocrystals
Boron (B) and phosphorous (P) co-doped colloidal silicon nanocrystals (Si NCs) have
unique size-dependent optical properties, which lead to potential applications in …
unique size-dependent optical properties, which lead to potential applications in …
Confined phase separation in SiOx nanometric thin layers
Phase separation in silicon-rich silica/silica multilayers was investigated using Atom Probe
Tomography and Atomistic Kinetic Monte Carlo simulation. It is shown that the thickness of …
Tomography and Atomistic Kinetic Monte Carlo simulation. It is shown that the thickness of …
Formation of silicon nanocomposites by annealing of (SiOx/Sm)n multilayers: luminescence, Raman and FTIR studies
KV Michailovska, IZ Indutnyi, PE Shepeliavyi… - Applied …, 2023 - Springer
A comparative study of the processes of metal-stimulated formation of silicon nanocrystals in
SiO x–Sm structures was carried out. Samples with identical oxide matrix stoichiometry and …
SiO x–Sm structures was carried out. Samples with identical oxide matrix stoichiometry and …
Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study
Raman spectroscopy/mapping is used to investigate the variation of Si phonon
wavenumbers, ie, lower wavenumber (LW~ 495–510 cm− 1) and higher wavenumber (HW …
wavenumbers, ie, lower wavenumber (LW~ 495–510 cm− 1) and higher wavenumber (HW …
Origin of Pr3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations
R Demoulin, G Beainy, C Castro, P Pareige… - Nano …, 2018 - iopscience.iop.org
Structural, chemical, and luminescence properties of Pr 3+-doped HfSiO x layers fabricated
by radio-frequency magnetron sputtering were examined as a function of annealing …
by radio-frequency magnetron sputtering were examined as a function of annealing …
Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix
F Ehrhardt, G Ferblantier, D Muller… - Journal of Applied …, 2013 - pubs.aip.org
In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were
deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in …
deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in …