Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
Silicon carbide diodes for neutron detection
In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …
[HTML][HTML] Charge state control of the silicon vacancy and divacancy in silicon carbide
Color centers in silicon carbide (SiC), such as the negative silicon vacancy (V Si−) and
neutral divacancy (V Si VC 0), have recently been shown to be promising quantum bits …
neutral divacancy (V Si VC 0), have recently been shown to be promising quantum bits …
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC
I Capan, T Brodar, Y Yamazaki, Y Oki… - Nuclear Instruments and …, 2020 - Elsevier
We report on influence of neutron radiation on majority and minority carrier traps in n-type 4
H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier …
H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier …
Theory of the thermal stability of silicon vacancies and interstitials in 4H–SiC
J Coutinho - Crystals, 2021 - mdpi.com
This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …
Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation
We report the effect of EH 6/7 electron trap centers alone on the performance of high-
resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky …
resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky …
Negative- carbon vacancy in 4-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
The carbon vacancy (VC) has been suggested by different studies to be involved in the Z 1/Z
2 defect-a carrier lifetime killer in SiC. However, the correlation between the Z 1/Z 2 deep …
2 defect-a carrier lifetime killer in SiC. However, the correlation between the Z 1/Z 2 deep …
Quantitative comparison between Z1∕ 2 center and carbon vacancy in 4H-SiC
K Kawahara, X Thang Trinh, N Tien Son… - Journal of Applied …, 2014 - pubs.aip.org
In this study, to reveal the origin of the Z 1∕ 2 center, a lifetime killer in n-type 4H-SiC, the
concentrations of the Z 1∕ 2 center and point defects are compared in the same samples …
concentrations of the Z 1∕ 2 center and point defects are compared in the same samples …
Theory of the carbon vacancy in -SiC: Crystal field and pseudo-Jahn-Teller effects
The carbon vacancy in 4 H-SiC is a powerful minority carrier recombination center in as-
grown material and a major cause of degradation of SiC-based devices. Despite the …
grown material and a major cause of degradation of SiC-based devices. Despite the …
Patterned tungsten disulfide/graphene heterostructures for efficient multifunctional optoelectronic devices
One of the major issues in graphene-based optoelectronics is to scale-up high-performing
devices. In this work, we report an original approach for the fabrication of efficient …
devices. In this work, we report an original approach for the fabrication of efficient …