Non-polar and semi-polar ammonothermal GaN substrates
R Kucharski, M Zając, R Doradziński… - Semiconductor …, 2012 - iopscience.iop.org
In this paper we review the developments of producing non-polar (ie m-plane and a-plane)
and semi-polar (ie (20.1)-plane) wafers by ammonothermal method. The growth method and …
and semi-polar (ie (20.1)-plane) wafers by ammonothermal method. The growth method and …
Surface morphology evolution of m-plane (11¯ 00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
Surface morphology evolution of m-plane (1100) GaN during molecular beam epitaxy growth:
Impact of Ga/N ratio, miscut direction, and growth temperature | Journal of Applied Physics …
Impact of Ga/N ratio, miscut direction, and growth temperature | Journal of Applied Physics …
Contactless electroreflectance studies of surface potential barrier for N-and Ga-face epilayers grown by molecular beam epitaxy
R Kudrawiec, L Janicki, M Gladysiewicz… - Applied Physics …, 2013 - pubs.aip.org
Two series of N-and Ga-face GaN Van Hoof structures were grown by plasma-assisted
molecular beam epitaxy to study the surface potential barrier by contactless …
molecular beam epitaxy to study the surface potential barrier by contactless …
Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE
M Bouzidi, AS Alshammari, S Soltani, I Halidou… - Materials Science and …, 2021 - Elsevier
We investigated the structural and optical properties of AlGaN films grown on SiN-treated
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
Surface potential barrier in m-plane GaN studied by contactless electroreflectance
Contactless electroreflectance (CER) is used to study the surface potential barrier in m-
plane GaN UN+[GaN ($ d= 20, 30, 50, 70$ nm)/GaN: Si] structures grown by using …
plane GaN UN+[GaN ($ d= 20, 30, 50, 70$ nm)/GaN: Si] structures grown by using …
AlGaN/GaN 高電子遷移率電晶體異質結構的光學性質與其缺陷討論
WH Tseng - 2017 - ir.lib.ncu.edu.tw
摘要(中) 本論文利用光激螢光光譜及拉曼光譜分析AlGaN/GaN 異質結構HEMT 的光學特性,
主要工作分為以下幾個部分. 利用光激螢光光譜判斷2DEG 所輻射螢光位置, 利用PL …
主要工作分為以下幾個部分. 利用光激螢光光譜判斷2DEG 所輻射螢光位置, 利用PL …
Quantum confinement in thin GaN cap layers deposited on AlGaN/GaN heterostructures: the issue of polar surface quantum well
M Gladysiewicz, R Kudrawiec - Japanese Journal of Applied …, 2013 - iopscience.iop.org
The quantum confinement in Ga-and N-polar GaN surface quantum well (SuQW) formed on
AlGaN/GaN heterostructures is calculated within the effective mass approximation. The …
AlGaN/GaN heterostructures is calculated within the effective mass approximation. The …
Ammono-GaN substrates for microwave and RF electronics applications
R Dwiliński, R Doradziński, L Sierzputowski… - Elektronika: konstrukcje …, 2012 - infona.pl
Bulk GaN crystals are regarded as the most promising candidates for substrates for
optoelectronic, high power and high frequency electronic devices. In this paper some …
optoelectronic, high power and high frequency electronic devices. In this paper some …
Highly resistive GaN substrates for high frequency electronics
R Dwiliński, R Doradziński… - 2013 European …, 2013 - ieeexplore.ieee.org
Bulk GaN crystals are regarded as the most promising candidates for substrates for
optoelectronic, high power and high frequency electronic devices. In this paper some …
optoelectronic, high power and high frequency electronic devices. In this paper some …
AMMONO-GaN substrates for microwave and RF applications
R Dwiliński, R Doradziński… - … , Radar & Wireless …, 2012 - ieeexplore.ieee.org
Bulk GaN crystals are regarded as the most promising candidates for substrates for
optoelectronic, high power and high frequency electronic devices. In this paper some …
optoelectronic, high power and high frequency electronic devices. In this paper some …