Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene
D Momeni Pakdehi, P Schädlich… - Advanced Functional …, 2020 - Wiley Online Library
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two
effects: p‐type polarization doping induced by the bulk of the hexagonal silicon carbide …
effects: p‐type polarization doping induced by the bulk of the hexagonal silicon carbide …
Role of substrate on interaction of water molecules with graphene oxide and reduced graphene oxide
R Strzelczyk, CE Giusca, F Perrozzi, G Fioravanti… - Carbon, 2017 - Elsevier
We study local electronic properties of graphene oxide (GO) and reduced graphene oxide
(RGO) on metallic (Pt) and insulating (Si 3 N 4) substrates in controlled humidity …
(RGO) on metallic (Pt) and insulating (Si 3 N 4) substrates in controlled humidity …
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to
determine directionally dependent free charge carrier properties of ambient-doped …
determine directionally dependent free charge carrier properties of ambient-doped …
Optimization of epitaxial graphene growth for quantum metrology
D Momeni Pakdehi - 2020 - repo.uni-hannover.de
The electrical quantum standards have played a decisive role in modern metrology,
particularly since the introduction of the revised International System of Units (SI) in May …
particularly since the introduction of the revised International System of Units (SI) in May …
Optimization of epitaxial graphene growth for quantum metrology
DM Pakdehi - arXiv preprint arXiv:2102.08691, 2021 - arxiv.org
(See the complete abstract within the thesis in both English and German versions) In this
thesis, the process conditions of the epitaxial graphene growth through a socalled polymer …
thesis, the process conditions of the epitaxial graphene growth through a socalled polymer …