Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …
and energy-related technologies, on the basis of their intriguing properties including …
Bi2O2Se: A rising star for semiconductor devices
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …
Sodium‐Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection
M Zhao, J Su, Y Zhao, P Luo, F Wang… - Advanced Functional …, 2020 - Wiley Online Library
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn
widespread attention thanks to its outstanding optoelectronic properties as compared to the …
widespread attention thanks to its outstanding optoelectronic properties as compared to the …
LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Emergent phenomena, including superconductivity and magnetism, found in the two-
dimensional electron liquid (2-DEL) at the interface between the insulators lanthanum …
dimensional electron liquid (2-DEL) at the interface between the insulators lanthanum …
Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO3 Heterostructures Grown by Atomic Layer Deposition
SW Lee, Y Liu, J Heo, RG Gordon - Nano letters, 2012 - ACS Publications
The formation of a two-dimensional electron gas (2-DEG) using SrTiO3 (STO)-based
heterostructures provides promising opportunities in oxide electronics. We realized the …
heterostructures provides promising opportunities in oxide electronics. We realized the …
Layered : A Promising Anisotropic Thermoelectric Material
Thermoelectric (TE) materials can convert temperature difffferences into electricity directly
and reversibly without air pollution, which provides a viable route for alleviating global …
and reversibly without air pollution, which provides a viable route for alleviating global …
Effect of Growth Induced (Non)Stoichiometry on Interfacial Conductance in
We demonstrate a link between the growth process, the stoichiometry of LaAlO 3, and the
interfacial electrical properties of LaAlO 3/SrTiO 3 heterointerfaces. Varying the relative La …
interfacial electrical properties of LaAlO 3/SrTiO 3 heterointerfaces. Varying the relative La …
Tunable conductivity threshold at polar oxide interfaces
ML Reinle-Schmitt, C Cancellieri, D Li… - Nature …, 2012 - nature.com
The physical mechanisms responsible for the formation of a two-dimensional electron gas at
the interface between insulating SrTiO3 and LaAlO3 have remained a contentious subject …
the interface between insulating SrTiO3 and LaAlO3 have remained a contentious subject …
The origin of two-dimensional electron gases at oxide interfaces: insights from theory
The response of oxide thin films to polar discontinuities at interfaces and surfaces has
generated enormous activity due to the variety of interesting effects that it gives rise to. A …
generated enormous activity due to the variety of interesting effects that it gives rise to. A …
Nonvolatile Resistive Switching in Heterostructures
Resistive switching heterojunctions, which are promising for nonvolatile memory
applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report …
applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report …