Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

W Li, J Shi, KHL Zhang, JL MacManus-Driscoll - Materials Horizons, 2020 - pubs.rsc.org
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Bi2O2Se: A rising star for semiconductor devices

X Ding, M Li, P Chen, Y Zhao, M Zhao, H Leng, Y Wang… - Matter, 2022 - cell.com
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …

Sodium‐Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection

M Zhao, J Su, Y Zhao, P Luo, F Wang… - Advanced Functional …, 2020 - Wiley Online Library
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn
widespread attention thanks to its outstanding optoelectronic properties as compared to the …

LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces

MP Warusawithana, C Richter, JA Mundy, P Roy… - Nature …, 2013 - nature.com
Emergent phenomena, including superconductivity and magnetism, found in the two-
dimensional electron liquid (2-DEL) at the interface between the insulators lanthanum …

Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO3 Heterostructures Grown by Atomic Layer Deposition

SW Lee, Y Liu, J Heo, RG Gordon - Nano letters, 2012 - ACS Publications
The formation of a two-dimensional electron gas (2-DEG) using SrTiO3 (STO)-based
heterostructures provides promising opportunities in oxide electronics. We realized the …

Layered : A Promising Anisotropic Thermoelectric Material

N Wang, M Li, H Xiao, X Zu, L Qiao - Physical Review Applied, 2020 - APS
Thermoelectric (TE) materials can convert temperature difffferences into electricity directly
and reversibly without air pollution, which provides a viable route for alleviating global …

Effect of Growth Induced (Non)Stoichiometry on Interfacial Conductance in

E Breckenfeld, N Bronn, J Karthik, AR Damodaran… - Physical Review Letters, 2013 - APS
We demonstrate a link between the growth process, the stoichiometry of LaAlO 3, and the
interfacial electrical properties of LaAlO 3/SrTiO 3 heterointerfaces. Varying the relative La …

Tunable conductivity threshold at polar oxide interfaces

ML Reinle-Schmitt, C Cancellieri, D Li… - Nature …, 2012 - nature.com
The physical mechanisms responsible for the formation of a two-dimensional electron gas at
the interface between insulating SrTiO3 and LaAlO3 have remained a contentious subject …

The origin of two-dimensional electron gases at oxide interfaces: insights from theory

NC Bristowe, P Ghosez, PB Littlewood… - Journal of Physics …, 2014 - iopscience.iop.org
The response of oxide thin films to polar discontinuities at interfaces and surfaces has
generated enormous activity due to the variety of interesting effects that it gives rise to. A …

Nonvolatile Resistive Switching in Heterostructures

S Wu, X Luo, S Turner, H Peng, W Lin, J Ding, A David… - Physical Review X, 2013 - APS
Resistive switching heterojunctions, which are promising for nonvolatile memory
applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report …