For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated
Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for …

In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier
MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric …

Abstract In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN
Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for …

In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …

This study presents the numerical modeling of an underlap gate cavity-integrated
reconfigurable silicon nanowire Schottky barrier transistor (UGC-RSiNW SBT) that features a …

In this work, an analytical model has been projected to examine the effect of temperature on
the Gallium Nitride (GaN) based High-K Schottky Barrier Nano Wire Field Effect Transistor …

This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and
uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface …

This study investigates the sensitivity of Underlap Gate Cavity-based Reconfigurable Silicon
Nanowire Schottky Barrier Transistor (UCG-RSiNW SBT) with an underlap gate-drain region …

In this paper, we present an analytical modeling of a Silicon Nanowire Dielectric Modulated
Reconfigurable FET (SiNW-DMRFET) biosensor having a cavity under the control gate. By …

This article mainly focuses on the impact on interface trap charges (ITCs) on dual gate
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …