We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire
heterostructures at unit cell resolution as a key for the correlation of optical and structural …

The metal-oxide-semiconductor (MOS) capacitor is one of the fundamental electrical
components used in integrated circuits. While much effort is currently being made to …

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are
responsible for the resistive switching of the HfO 2-based resistive random access memory …

Pronounced improvements in the understanding of semiconductor device performance are
expected if electrostatic potential distributions can be measured quantitatively and reliably …

Abstract 4D-scanning transmission electron microscopy (4D-STEM) can be used to measure
electric fields such as atomic fields or polarization-induced electric fields in crystal …

The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown
by metal organic chemical vapor deposition was investigated by correlating atom probe …

Nanoelectronic devices play an essential role in many domains, and their development and
improvement attract considerable attention in fundamental and applied research. Access to …

Electron holography is a powerful technique that allows the phase shift of a high-energy
electron wave that has passed through a specimen in the transmission electron microscope …

We combined an in situ biasing technique with phase-shifting electron holography, which
can simultaneously achieve a high precision and high spatial resolution, to measure the …

The internal fields in 2.2 nm thick InGaN quantum wells in a GaN LED structure have been
investigated by using aberration-corrected off-axis electron holography with a spatial …