A review of resistive switching devices: performance improvement, characterization, and applications

T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu - Small Structures, 2021 - Wiley Online Library
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

A collective study on modeling and simulation of resistive random access memory

D Panda, PP Sahu, TY Tseng - Nanoscale research letters, 2018 - Springer
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

Perovskite material-based memristors for applications in information processing and artificial intelligence

M Liu, Z Cao, X Wang, S Mao, J Qin, Y Yang… - Journal of Materials …, 2023 - pubs.rsc.org
The emergence of memristive devices plays a significant role to promoting the development
of electronics in the post-Moore era, especially in the fields of information storage, artificial …

Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects

SS Li, YK Su - RSC advances, 2019 - pubs.rsc.org
The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in
this study, and evidence that the switching effect can be attributed to defects was found. X …

High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition

D Kumar, U Chand, LW Siang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al 2 O 3/ZnO/Al 2 O
3/TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al …

Impacts of Co doping on ZnO transparent switching memory device characteristics

FM Simanjuntak, OK Prasad, D Panda, CA Lin… - Applied Physics …, 2016 - pubs.aip.org
The resistive switching characteristics of indium tin oxide (ITO)/Zn 1− x Co x O/ITO
transparent resistive memory devices were investigated. An appropriate amount of cobalt …

Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory

C Ye, T Deng, J Zhang, L Shen, P He… - Semiconductor …, 2016 - iopscience.iop.org
Abstract We prepared bilayer HfO 2/TiO 2 resistive random accessory memory (RRAM)
using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET …

Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity

M Ismail, S Kim - Applied Surface Science, 2020 - Elsevier
In this work, we have fabricated a transparent Ce-based device with aluminum-zinc oxide
(AZO) as semiconducting electrode by radio-frequency (RF) sputtering on a transparent …