A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
The application of graphene as electrodes in electrical and optical devices
Graphene is a promising next-generation conducting material with the potential to replace
traditional electrode materials such as indium tin oxide in electrical and optical devices. It …
traditional electrode materials such as indium tin oxide in electrical and optical devices. It …
Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications
We herein present a nanoscale vanadium oxide (VO_2) device with excellent selector
characteristics such as a high on/off ratio (> 50), fast switching speed (< 20 ns), and high …
characteristics such as a high on/off ratio (> 50), fast switching speed (< 20 ns), and high …
Perovskite oxides as resistive switching memories: a review
D Panda, TY Tseng - Ferroelectrics, 2014 - Taylor & Francis
Numerous metal-insulator-metal systems demonstrate electrically induced resistive
switching effects and have therefore been proposed as the basis for future nonvolatile …
switching effects and have therefore been proposed as the basis for future nonvolatile …
Self-rectifying and interface-controlled resistive switching characteristics of molybdenum oxide
CC Hsu, SY Wang, YS Lin, YT Chen - Journal of Alloys and Compounds, 2019 - Elsevier
The self-rectifying resistive switching (RS) characteristics of molybdenum oxide (MoO x)
semiconductors are investigated in this paper. The MoO x RS layers are deposited by radio …
semiconductors are investigated in this paper. The MoO x RS layers are deposited by radio …
Low temperature solution-processed graphene oxide/Pr0. 7Ca0. 3MnO3 based resistive-memory device
We propose a graphene oxide (GO)/Pr 0.7 Ca 0.3 MnO 3 (PCMO) based resistance random
access memory (RRAM) device. Both active layers were prepared by a sol-gel spin-coating …
access memory (RRAM) device. Both active layers were prepared by a sol-gel spin-coating …
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films
In the last few years a number of models based on simple circuital representations have
been proposed to account for the resistive switching (RS) current–voltage (I–V) …
been proposed to account for the resistive switching (RS) current–voltage (I–V) …
Non-destructive photovoltaic reading of interface type memristors using graphene as transparent electrode
W Yuhang, W Lingyuan, L Guodong, L Lixin - Journal of Alloys and …, 2018 - Elsevier
The memristor device based on graphene/Nb-doped SrTiO 3 heterojunction was fabricated.
The device exhibits obvious resistive switching between high resistance state and low …
The device exhibits obvious resistive switching between high resistance state and low …
Effects of mobile charged defects on current–voltage behavior in resistive switching memories based on organic–inorganic hybrid perovskite
I–V characteristics that are commonly observed in resistive switching memories based on
organic or organic–inorganic hybrid materials are investigated using a drift–diffusion model …
organic or organic–inorganic hybrid materials are investigated using a drift–diffusion model …