The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Graphene is a promising next-generation conducting material with the potential to replace
traditional electrode materials such as indium tin oxide in electrical and optical devices. It …

We herein present a nanoscale vanadium oxide (VO_2) device with excellent selector
characteristics such as a high on/off ratio (> 50), fast switching speed (< 20 ns), and high …

Resistance random-access memory (RRAM) is a promising candidate for both the next-
generation non-volatile memory and the key element of neural networks. In this article …

Numerous metal-insulator-metal systems demonstrate electrically induced resistive
switching effects and have therefore been proposed as the basis for future nonvolatile …

The self-rectifying resistive switching (RS) characteristics of molybdenum oxide (MoO x)
semiconductors are investigated in this paper. The MoO x RS layers are deposited by radio …

We propose a graphene oxide (GO)/Pr 0.7 Ca 0.3 MnO 3 (PCMO) based resistance random
access memory (RRAM) device. Both active layers were prepared by a sol-gel spin-coating …

In the last few years a number of models based on simple circuital representations have
been proposed to account for the resistive switching (RS) current–voltage (I–V) …

The memristor device based on graphene/Nb-doped SrTiO 3 heterojunction was fabricated.
The device exhibits obvious resistive switching between high resistance state and low …

I–V characteristics that are commonly observed in resistive switching memories based on
organic or organic–inorganic hybrid materials are investigated using a drift–diffusion model …