Rare-earth nickelates RNiO3: thin films and heterostructures
This review stands in the larger framework of functional materials by focussing on
heterostructures of rare-earth nickelates, described by the chemical formula RNiO 3 where R …
heterostructures of rare-earth nickelates, described by the chemical formula RNiO 3 where R …
Epitaxial ferroelectric interfacial devices
Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …
Interface-type tunable oxygen ion dynamics for physical reservoir computing
Reservoir computing can more efficiently be used to solve time-dependent tasks than
conventional feedforward network owing to various advantages, such as easy training and …
conventional feedforward network owing to various advantages, such as easy training and …
Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering
The superior size and power scaling potential of ferroelectric-gated Mott transistors makes
them promising building blocks for developing energy-efficient memory and logic …
them promising building blocks for developing energy-efficient memory and logic …
[HTML][HTML] Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state
It has been gradually realized that the sustainable electronic devices are of great prospects
for sustainable applications in electronic technology products. From another point of view, a …
for sustainable applications in electronic technology products. From another point of view, a …
Tailoring materials for mottronics: excess oxygen doping of a prototypical mott insulator
P Scheiderer, M Schmitt, J Gabel, M Zapf… - Advanced …, 2018 - Wiley Online Library
The Mott transistor is a paradigm for a new class of electronic devices—often referred to by
the term Mottronics—which are based on charge correlations between the electrons. Since …
the term Mottronics—which are based on charge correlations between the electrons. Since …
Fully solution-processed organic RRAM device with highly stable butterfly-shaped hysteresis
Resistive random access memory (RRAM) is considered a promising next-generation
memory device owing to its low energy consumption and ultra-high speed. In this study, we …
memory device owing to its low energy consumption and ultra-high speed. In this study, we …
[HTML][HTML] Anomalous Hall effect and perpendicular magnetic anisotropy in ultrathin ferrimagnetic NiCo2O4 films
The inverse spinel ferrimagnetic NiCo 2 O 4 possesses high magnetic Curie temperature
TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the …
TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the …
Strongly correlated nickelate: Recent progress of synthesis and applications in artificial intelligence
Z Zhang, Y Yu, X Qiao, J Sun, Y Ni, J Chen - Materials Science in …, 2023 - Elsevier
Perovskite nickelates (ReNiO 3) belong to the family of strongly correlated materials, the
electrical properties of which are extremely sensitive to external stimuli. Nevertheless …
electrical properties of which are extremely sensitive to external stimuli. Nevertheless …
Interfacial charge transfer and its impact on transport properties of LaNiO3/LaFeO3 superlattices
Charge transfer or redistribution at oxide heterointerfaces is a critical phenomenon, often
leading to remarkable properties such as two-dimensional electron gas and interfacial …
leading to remarkable properties such as two-dimensional electron gas and interfacial …