This paper presents a physics-based analytical model for the MOS transistor operating
continuously from room temperature down to liquid-helium temperature (4.2 K) from …

Self-heating in fully depleted silicon-oninsulator (FDSOI) metal-oxide-semiconductor field-
effect transistors (MOSFETs) is experimentally studied using the gate resistance …

While continuing the CMOS scaling-down becomes unprecedentedly more challenging than
before, intensive exploration on beyond-CMOS nanodevice technologies is an appealing …

This paper proposes a physical charge-based analytical MOSFET threshold voltage model
that explicitly incorporates interface-trapped charges which have been identified as playing …

The temperature range of SPICE models of bipolar and field-effect transistors is extended
from the standard commercial level (-60° C⋯+ 150° C) to harsh conditions level (-200° C⋯+ …

The effect of ultra low operating temperature on mismatch among identically designed
Silicon-on-Sapphire CMOS devices is investigated in detail from a circuit design view point …

This paper presents a 10 bit CMOS current steering digital to analog converter (DAC) that
operates from room temperature to as low as 4.2 K. It works as the core part of a cryogenic …

Scaled-up silicon quantum computers show great potential for being manufacturable in
processes similar to modern ultra-deep sub-micron integrated circuit CMOS manufacturing …

To fully deploy power of quantum computing (QC), practical quantum computers require the
integration of a large number of qubits, eg, in the thousands and millions, to overcome the …

For the field of high energy physics to continue to have a bright future, priority within the field
must be given to investments in the development of both evolutionary and transformational …