FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick
ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2) layer are fabricated based on …
ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2) layer are fabricated based on …
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors
T Yu, W Lü, Z Zhao, P Si, K Zhang - Microelectronics Journal, 2021 - Elsevier
In this study, the negative drain-induced barrier lowering (DIBL) and negative differential
resistance (NDR) effects are investigated in detail in negative-capacitance field-effect …
resistance (NDR) effects are investigated in detail in negative-capacitance field-effect …
High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing
Ferroelectric thin film transistors (FE-TFTs) are of increasing interest for next generation
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
Effect of different capacitance matching on negative capacitance FDSOI transistors
T Yu, W Lü, Z Zhao, P Si, K Zhang - Microelectronics Journal, 2020 - Elsevier
Negative capacitance field-effect transistors (NCFETs) have several advantages over
traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered …
traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered …
Reconfigurable Logic-Memory Hybrid Device Based on Ferroelectric Hf0.5Zr0.5O2
In this letter, we demonstrate a reconfigurable logic-memory hybrid device (R-LMHD), which
can be dynamically and reversibly switched between the logic-and memory-mode. The logic …
can be dynamically and reversibly switched between the logic-and memory-mode. The logic …
A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications
W Wei, W Lü, Y Han, C Zhang, D Chen - Microelectronics Journal, 2024 - Elsevier
A recessed-source (RS) negative capacitance (NC) gate-all-around (GAA) tunneling field
effect transistor (RS-NCGAATFET) was proposed to achieve low power consumption and …
effect transistor (RS-NCGAATFET) was proposed to achieve low power consumption and …
Analytical modeling of negative capacitance transistor based ultra low power Schmitt trigger
G Keerthi, S Semwal, A Kranti - Solid-State Electronics, 2023 - Elsevier
Through an analytical framework, the work showcases the potential benefits of Metal-
Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) negative capacitance (NC) transistor …
Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) negative capacitance (NC) transistor …
Negative capacitance oxide thin-film transistor with sub-60 mV/decade subthreshold swing
In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor
(NC-OTFT) based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HfZrO) film. The buried-gated …
(NC-OTFT) based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HfZrO) film. The buried-gated …
Ternary logic circuit based on negative capacitance field-effect transistors and its variation immunity
W Huang, H Zhu, Y Zhang, Z Wu, Q Huo… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A multivalued logic (MVL) device can achieve greater data density with a smaller footprint
than a traditional binary logic device. In this study, a ternary logic inverter based on negative …
than a traditional binary logic device. In this study, a ternary logic inverter based on negative …
Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic …
S Semwal, A Kranti - Semiconductor Science and Technology, 2022 - iopscience.iop.org
The present reports an analytical modelling framework to provide insights into subthreshold
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …