Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs
A review of the basic mechanisms affecting the stability of the threshold voltage in response
to a bias-temperature stress is presented in terms of the charging and activation of near …
to a bias-temperature stress is presented in terms of the charging and activation of near …
[HTML][HTML] Silicon carbide: A unique platform for metal-oxide-semiconductor physics
A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
Bias temperature instability in SiC metal oxide semiconductor devices
C Yang, S Wei, D Wang - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
Generation of very fast states by nitridation of the SiO2/SiC interface
H Yoshioka, T Nakamura, T Kimoto - Journal of Applied Physics, 2012 - pubs.aip.org
Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …
The response frequency of the interface states was measured by the conductance method …
Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements
T Hatakeyama, Y Kiuchi, M Sometani… - Applied Physics …, 2017 - iopscience.iop.org
The effects of nitridation on the density of traps at SiO 2/SiC interfaces near the conduction
band edge were qualitatively examined using a simple, newly developed characterization …
band edge were qualitatively examined using a simple, newly developed characterization …
Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs
A Akturk, JM McGarrity, S Potbhare… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
In 2011, after many years of research and development SiC power MOSFETs became
available in the commercial marketplace. This paper presents the results of Co60 total …
available in the commercial marketplace. This paper presents the results of Co60 total …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
H Yoshioka, T Nakamura, T Kimoto - Journal of Applied Physics, 2012 - pubs.aip.org
We propose a method to accurately determine the surface potential (ψ S) based on
depletion capacitance, and the interface state density (D IT) was evaluated based on the …
depletion capacitance, and the interface state density (D IT) was evaluated based on the …