Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers
from limited CMOS-compatibility and faces severe scaling issues in today's and future …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

The structural, thermal, and dielectric properties of the ferroelectric phase of HfO 2, ZrO 2,
and Hf 0.5 Zr 0.5 O 2 (HZO) are investigated with carefully validated density functional …

The transition metal oxides ZrO2 and HfO2 as well as their solid solution are widely
researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal …

The unexpected ferroelectric properties of nanoscale hafnia-zirconia are considered to be
promising for a wealth of applications including ferroelectric memory, field effect transistors …

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films
in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer …

Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-
the-art 14nm FinFET technology without any further process modification. Ferroelectric …

The ferroelectric properties of ultrathin Y-doped HfO 2 films were investigated.
Ferroelectricity was demonstrated experimentally in 3 nm-thick Y-doped HfO 2 via direct …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

We review the nonaqueous precursor chemistry of the group 4 metals to gain insight into the
formation of their oxo clusters and colloidal oxide nanocrystals. We first describe the …