Study and analysis of advanced 3D multi-gate junctionless transistors
As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications
In this article, a reliable static random access memory (SRAM) circuit design is proposed for
improved thermal and electrical performance at 5-nm technology nodes. The proposed …
improved thermal and electrical performance at 5-nm technology nodes. The proposed …
Analog/RF performance analysis of channel engineered high-k gate-stack based junctionless trigate-FinFET
In this paper, the effect of channel parameters like channel thickness (T Si) and channel
length (L g) on the analog/RF performance of high-K gate-stack based junctionless Trigate …
length (L g) on the analog/RF performance of high-K gate-stack based junctionless Trigate …
Design insights into thermal performance of vertically stacked JL-NSFET with high-k gate dielectric for sub 5-nm technology node
Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Optimization of gate-stack in junctionless Si-nanotube FET for analog/RF applications
In this work, gate-stack based junctionless Si-nanotube (JLSiNT) FET is studied to
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
Simulation-based analysis of an L-patterned negative-capacitance dual tunnel VTFET
G Gopal, H Agrawal, H Garg… - International Journal of …, 2024 - Taylor & Francis
This paper investigates the design and analog the behaviour of an L-Patterned Negative-
Capacitance Dual Tunneling Vertical TFET (L-NC-DT-VTFET) device with the idea of corner …
Capacitance Dual Tunneling Vertical TFET (L-NC-DT-VTFET) device with the idea of corner …
Inner-gate-engineered GAA MOSFET to enhance the electrostatic integrity
Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their
strong electrostatic control over the channel. The electrostatic controllability can be …
strong electrostatic control over the channel. The electrostatic controllability can be …
Effect of gate length on performance of 5nm node N-channel nano-sheet transistors for analog circuits
In this work, the effect of channel length on the performance of an N-channel Nano-sheet
Transistor (NST) for analog circuits has been investigated. A fully-calibrated TCAD platform …
Transistor (NST) for analog circuits has been investigated. A fully-calibrated TCAD platform …
Performance analysis of ferroelectric gaa mosfet with metal grain work function variability
This work represents a unique GAA MOSFET with metal work-function variations (WFVs)
and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain …
and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain …
Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective
This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …