Although the first lasers invented operated in the visible, the first on-chip devices were
optimized for near-infrared (IR) performance driven by demand in telecommunications …

Ga 2 O 3 is an ideal wide bandgap semiconductor for deep ultraviolet photodetectors due to
the suitable band gap and excellent material stability, but the inevitable escape of oxygen …

Comprehensive structural, electrical and optical studies are performed on a series of gallium
oxide (Ga 2 O 3) ultrathin films grown on sapphire with different growth temperatures (400 …

Abstract Gallium oxide (Ga 2 O 3) semiconductor has attracted increasingly interested in the
optoelectronic field, due to the wide bandgap of 4.9 eV. However, the fabrication of Ga 2 O 3 …

Abstract Gallium oxide (Ga2O3) is an emerging wide‐bandgap transparent conductive oxide
(TCO) with potential applications for high‐power optical systems. Herein, Ga2O3 fabricated …

The anisotropic optical constants of high-quality, single crystalline Ga 2 O 3 films in both
orthorhombic (ε) and monoclinic (β) phases were obtained from ellipsometry study. The …

In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric
thin films for high-performance oxide thin-film transistors. The role of B incorporation on the …

In this letter, we investigate a set of n-type single crystals of monoclinic symmetry β-Ga 2 O 3
with different free electron concentration values by generalized far infrared and infrared …

Both gallium oxide and gallium nitride have great potential for use as high power
transparent conducting oxide materials for a wide range of optoelectronic applications. It is …

In this work, β-Ga 2 O 3 films are obtained by the RF magnetron sputtering method. Effects of
the growth pressure on properties of the deposited β-Ga 2 O 3 films and the corresponding …