Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Polarons

TK Mitra, A Chatterjee, S Mukhopadhyay - Physics Reports, 1987 - Elsevier
Selected areas of the broad subject of polarons are reviewed here. A derivation of the
Fröhlich continuum polaron Hamiltonian is presented in a fairly complete form. Early notable …

Band parameters for III–V compound semiconductors and their alloys

I Vurgaftman, JAR Meyer, LR Ram-Mohan - Journal of applied physics, 2001 - pubs.aip.org
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Effects of gate-induced electric fields on semiconductor Majorana nanowires

AE Antipov, A Bargerbos, GW Winkler, B Bauer… - Physical Review X, 2018 - APS
We study the effect of gate-induced electric fields on the properties of semiconductor-
superconductor hybrid nanowires which represent a promising platform for realizing …

Infrared and microwave magnetoplasma effects in semiconductors

ED Palik, JK Furdyna - Reports on Progress in Physics, 1970 - iopscience.iop.org
The interaction of electromagnetic waves with free-carrier plasmas in semiconductors and
semimetals is analysed, with particular emphasis on microwave and infrared effects arising …

Electron transport phenomena in small-gap semiconductors

W Zawadzki - Advances in physics, 1974 - Taylor & Francis
Electron transport phenomena in small-gap III–V, II–VI and IV–VI semiconducting
compounds are reviewed. We emphasize peculiarities due to nonparabolic energy …

Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices

M Altarelli - Physical review B, 1983 - APS
Self-consistent electronic structure calculations in the envelope-function approximation are
performed for InAs-GaSb superlattices, with a three-band k→· p→ formalism and suitable …

Energy levels of direct excitons in semiconductors with degenerate bands

A Baldereschi, NC Lipari - Physical Review B, 1971 - APS
A new method to investigate the direct-exciton spectrum in semiconductors with degenerate
bands is described. This method, which sloves the effective-mass Hamiltonian using …

Effective Factor of Subgap States in Hybrid Nanowires

S Vaitiekėnas, MT Deng, J Nygård, P Krogstrup… - Physical review …, 2018 - APS
We use the effective g factor of Andreev subgap states in an axial magnetic field to
investigate how the superconducting density of states is distributed between the …

Electronic properties of InAs GaSb superlattices

LL Chang, L Esaki - Surface Science, 1980 - Elsevier
Experimental results in InAs-GaSb superlattices are reviewed, focussing on the difference
between this type of superlattice and that of GaAs Ga1− xAlxAs. The emphasis is on …