Polarons
TK Mitra, A Chatterjee, S Mukhopadhyay - Physics Reports, 1987 - Elsevier
Selected areas of the broad subject of polarons are reviewed here. A derivation of the
Fröhlich continuum polaron Hamiltonian is presented in a fairly complete form. Early notable …
Fröhlich continuum polaron Hamiltonian is presented in a fairly complete form. Early notable …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Effects of gate-induced electric fields on semiconductor Majorana nanowires
We study the effect of gate-induced electric fields on the properties of semiconductor-
superconductor hybrid nanowires which represent a promising platform for realizing …
superconductor hybrid nanowires which represent a promising platform for realizing …
Infrared and microwave magnetoplasma effects in semiconductors
ED Palik, JK Furdyna - Reports on Progress in Physics, 1970 - iopscience.iop.org
The interaction of electromagnetic waves with free-carrier plasmas in semiconductors and
semimetals is analysed, with particular emphasis on microwave and infrared effects arising …
semimetals is analysed, with particular emphasis on microwave and infrared effects arising …
Electron transport phenomena in small-gap semiconductors
W Zawadzki - Advances in physics, 1974 - Taylor & Francis
Electron transport phenomena in small-gap III–V, II–VI and IV–VI semiconducting
compounds are reviewed. We emphasize peculiarities due to nonparabolic energy …
compounds are reviewed. We emphasize peculiarities due to nonparabolic energy …
Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
M Altarelli - Physical review B, 1983 - APS
Self-consistent electronic structure calculations in the envelope-function approximation are
performed for InAs-GaSb superlattices, with a three-band k→· p→ formalism and suitable …
performed for InAs-GaSb superlattices, with a three-band k→· p→ formalism and suitable …
Energy levels of direct excitons in semiconductors with degenerate bands
A Baldereschi, NC Lipari - Physical Review B, 1971 - APS
A new method to investigate the direct-exciton spectrum in semiconductors with degenerate
bands is described. This method, which sloves the effective-mass Hamiltonian using …
bands is described. This method, which sloves the effective-mass Hamiltonian using …
Effective Factor of Subgap States in Hybrid Nanowires
We use the effective g factor of Andreev subgap states in an axial magnetic field to
investigate how the superconducting density of states is distributed between the …
investigate how the superconducting density of states is distributed between the …
Electronic properties of InAs GaSb superlattices
LL Chang, L Esaki - Surface Science, 1980 - Elsevier
Experimental results in InAs-GaSb superlattices are reviewed, focussing on the difference
between this type of superlattice and that of GaAs Ga1− xAlxAs. The emphasis is on …
between this type of superlattice and that of GaAs Ga1− xAlxAs. The emphasis is on …