Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

We present a comprehensive study of the transport dynamics of electrons in the ternary
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are
examined and compared with that which occurs in GaAs. For all materials, we find that …

We investigate the high-field transport in monoclinic β-Ga 2 O 3 using a combination of ab
initio calculations and full band Monte Carlo (FBMC) simulation. Scattering rate calculation …

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

Monte Carlo simulations of electron transport based upon an analytical representation of the
lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport …