In this article, a physics-based analytical model which considers the channel charge (Q ch)
for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is …

The degradation behavior and its mechanisms of E-mode GaN high electron mobility
transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were …

This article introduces a physics-based framework for modeling drain current in p-GaN gate
high electron mobility transistors (p-GaN HEMTs). The model is constructed on fundamental …

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs)
have superior advantages like low leakage current and large gate swing. To fully use those …

Physics-based compact models have well-known advantages over empirical modeling
approaches, such as consistent and physical behavior of the model for different types of …

为了满足功率电路及系统设计对p-GaN HEMT (High Electron Mobility Transistor)
器件模型的需求, 本文建立了一套基于表面势计算方法的增强型p-GaN HEMT 器件SPICE …

In this article, a semiempirical model for enhancement-mode (E-mode) AlGaN/gallium nitride
(GaN) high-electron mobility transistors (HEMTs) with p-GaN gate is extended from …

In this study, we investigate the degradation characteristics of E-mode GaN High Electron
Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative …

Primary Examiner–Cuong B Nguyen (74) Attorney, Agent, or Firm–DALY, CROWLEY,
MOFFORD & DURKEE, LLP (57) ABSTRACT A semiconductor device having relatively …

In this paper, we have investigated the degradation behavior and the physical mechanism of
the E-mode Casecode GaN HEMTs after hydrogen treatment. The effects of hydrogen on the …