Light emitting devices based on quantum well-dots

MV Maximov, AM Nadtochiy, SA Mintairov… - Applied Sciences, 2020 - mdpi.com
We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …

High efficiency inverted GaAs and GaInP/GaAs solar cells with strain‐balanced GaInAs/GaAsP quantum wells

MA Steiner, RM France, J Buencuerpo… - Advanced Energy …, 2021 - Wiley Online Library
High‐efficiency solar cells are essential for high‐density terrestrial applications, as well as
space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum …

Material gain of InGaAs/GaAs quantum well-dots

NY Gordeev, MV Maximov, AS Payusov… - Semiconductor …, 2020 - iopscience.iop.org
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a …

Growth optimization of quantum-well-enhanced multijunction photovoltaics

S Polly, B Bogner, A Fedorenko, N Pokharel… - Cell Reports Physical …, 2023 - cell.com
III-V materials enable the highest reported power conversion efficiency of any photovoltaic
technology. The incorporation of high-quality nanostructures can tailor absorption to the …

Comparison of various voltage metrics for the evaluation of the nonradiative voltage loss in quantum-structure solar cells

M Asami, K Watanabe, R Yokota… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
There are several methods for the evaluation of the performance of solar cells through the
voltage loss. However, the advantages and disadvantages of each method have not been …

The origins of nonlinear peculiarities on the IV characteristics of multi-junction solar cells

MA Mintairov, VV Evstropov, SA Mintairov… - Solar Energy Materials …, 2025 - Elsevier
The paper presents an overview of studies of the multi-junction (MJ) solar cells (SC) with IV
characteristics having nonlinear peculiarities. It is shown that such peculiarities can arise …

Refining Photothermal Deflection Spectroscopy: Incorporating Reflectance for Enhanced Accuracy in Light‐Absorption Measurements

M Asami, H Kampwerth, M Pollard, X Hao… - … status solidi (a), 2024 - Wiley Online Library
A method for measuring light absorption using photothermal deflection spectroscopy (PDS)
is investigated. Typical reflectance and transmittance (R & T) absorption measurements …

InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

SA Mintairov, NA Kalyuzhnyy… - Semiconductor …, 2016 - iopscience.iop.org
MOCVD-grown GaAs single-junction solar cells (SC) with quantum well-dots (QWD) were
fabricated and tested. The QWD were formed by the deposition of In 0.4 Ga 0.6 As layers …

[HTML][HTML] Comprehensive voltage-loss analysis and reduction of radiative recombination voltage loss in quantum-structured solar cells

M Asami, M Hino, G Li, K Watanabe, Y Nakano… - Solar Energy Materials …, 2024 - Elsevier
Voltage-loss analysis is essential in the development of next-generation solar cells, such as
perovskite, chalcopyrite, kesterite, and nano/quantum-structured solar cells. Voltage-loss …

Current flow mechanism in GaAs solar cells with GaInAs quantum dots

M Mintairov, V Evstropov, M Shvarts… - AIP Conference …, 2016 - pubs.aip.org
Resistance-less dark IV-curves of GaAs solar cells with and without quantum-dimensional
objects allied to both quantum dot and quantum well have been obtained and analyzed …