Low-frequency noise with a spectral density that depends inversely on frequency has been
observed in a wide variety of systems including current fluctuations in resistors, intensity …

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

A unified flicker noise model which incorporates both the number fluctuation and the
correlated surface mobility fluctuation mechanism is discussed. The latter is attributed to the …

The use of 1/f noise measurements in n-channel MOSFETs to extract the oxide trap density
in space and energy near and above the conduction band edge of silicon is investigated …

The selection of drain current, inversion coefficient, and channel length for each MOS device
in an analog circuit results in significant tradeoffs in performance. The selection of inversion …

An overview is given of recent theoretical concepts and experimental findings with respect to
the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …

Flicker noise is the dominant noise source in silicon MOSFET's. Even though considerable
amount of work has been done in investigating the noise mechanism, controversy still exists …

Discussed is a physics-based MOSFET noise model that can accurately predict the noise
characteristics over the linear, saturation, and subthreshold operating regions but which is …

Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n
heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room …

We fabricated a large number of single and bilayer graphene transistors and carried out a
systematic experimental study of their low-frequency noise characteristics. Special attention …