Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

A Manchon, J Železný, IM Miron, T Jungwirth… - Reviews of Modern …, 2019 - APS
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

Spin-transfer torque devices for logic and memory: Prospects and perspectives

X Fong, Y Kim, K Yogendra, D Fan… - … on Computer-Aided …, 2015 - ieeexplore.ieee.org
As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

Z Wang, W Zhao, E Deng, JO Klein… - Journal of Physics D …, 2015 - iopscience.iop.org
We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer
torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic …

Enabling energy-efficient nonvolatile computing with negative capacitance FET

X Li, J Sampson, A Khan, K Ma… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Negative capacitance FETs (NCFETs) have attracted significant interest due to their steep-
switching capability at a low voltage and the associated benefits for implementing energy …

Area-efficient SOT-MRAM with a Schottky diode

Y Seo, KW Kwon, K Roy - IEEE Electron Device Letters, 2016 - ieeexplore.ieee.org
This letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …

Advancing nonvolatile computing with nonvolatile NCFET latches and flip-flops

X Li, S George, K Ma, WY Tsai, A Aziz… - … on Circuits and …, 2017 - ieeexplore.ieee.org
Nonvolatile computing has been proven to be effective in dealing with power supply outages
for on-chip check-pointing in emerging energy-harvesting Internet-of-Things applications. It …

High-speed, low-power, magnetic non-volatile flip-flop with voltage-controlled, magnetic anisotropy assistance

W Kang, Y Ran, W Lv, Y Zhang… - IEEE Magnetics …, 2016 - ieeexplore.ieee.org
A magnetic non-volatile flip-flop (MNV-FF) design, with the assistance of voltage-controlled
magnetic anisotropy (VCMA) effect, is proposed for low-power and high-speed applications …

Ultra-low power, highly reliable, and nonvolatile hybrid MTJ/CMOS based full-adder for future VLSI design

R Rajaei, SB Mamaghani - IEEE Transactions on device and …, 2016 - ieeexplore.ieee.org
Very large-scale integrated circuit design, based on today's CMOS technologies, are facing
various challenges. Shrinking transistor dimensions, reduction in threshold voltage, and …

Non-volatile spintronic flip-flop design for energy-efficient SEU and DNU resilience

FS Alghareb, R Zand… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, low-energy radiation-hardening approaches are proposed to develop non-
volatile (NV) flip-flop (FF) circuits using spintronic devices. In particular, spin Hall effect …

Ferroelectric transistor based non-volatile flip-flop

D Wang, S George, A Aziz, S Datta… - Proceedings of the …, 2016 - dl.acm.org
We present a non-volatile flip-flop with a feature to back-up the state in a ferroelectric
transistor (FEFET) during power failure or supply gating. The data is stored in the form of …