Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around
Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained …
Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained …
Investigation of the InAs/GaAs quantum dots' size: dependence on the strain reducing layer's position
This work reports on theoretical and experimental investigation of the impact of InAs
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
E Di Russo, N Cherkashin, M Korytov… - Journal of Applied …, 2019 - pubs.aip.org
Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …
Electron microscopy by specimen design: application to strain measurements
N Cherkashin, T Denneulin, MJ Hÿtch - Scientific reports, 2017 - nature.com
A bewildering number of techniques have been developed for transmission electron
microscopy (TEM), involving the use of ever more complex combinations of lens …
microscopy (TEM), involving the use of ever more complex combinations of lens …
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
A procedure to quantitatively analyse the relationship between the wetting layer (WL) and
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
Quantitative strain analysis of InAs/GaAs quantum dot materials
Geometric phase analysis has been applied to high resolution aberration corrected
(scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) …
(scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) …
Reconstruction of nuclear quadrupole interaction in (In, Ga) As/GaAs quantum dots observed by transmission electron microscopy
A microscopic study of the individual annealed (In, Ga) As/GaAs quantum dots is done by
means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor …
means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor …
Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots
Y Yamaguchi, Y Inaba, R Arai, Y Kanitani… - The Journal of …, 2024 - ACS Publications
Self-assembled quantum dots (QDs) are potential candidates for photoelectric and
photovoltaic devices, because of their discrete energy levels. The characterization of QDs at …
photovoltaic devices, because of their discrete energy levels. The characterization of QDs at …
Experimentally-Verified Modeling of InGaAs Quantum Dots
We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs,
which takes into account experimentally determined indium distribution inside the QD, its …
which takes into account experimentally determined indium distribution inside the QD, its …
Room-temperature yellow-orange (In, Ga, Al) P–GaP laser diodes grown on (n11) GaAs substrates
NN Ledentsov, VA Shchukin, YM Shernyakov… - Optics express, 2018 - opg.optica.org
We report room temperature injection lasing in the yellow–orange spectral range (599–605
nm) in (Al_xGa_1–x) _0. 5In_0. 5P–GaAs diodes with 4 layers of tensile-strained In_yGa_1 …
nm) in (Al_xGa_1–x) _0. 5In_0. 5P–GaAs diodes with 4 layers of tensile-strained In_yGa_1 …