[PDF][PDF] Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
[HTML][HTML] Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by …
GaN-based high electron mobility transistors (HEMTs) have demonstrated high frequency
power amplification with considerably larger output power densities than that available from …
power amplification with considerably larger output power densities than that available from …
First demonstration of an N-polar InAlGaN/GaN HEMT
In this letter, we report the first N-polar InAlGaN quaternary back barrier high-electron-
mobility transistor (HEMT). The epitaxial device heterostructure was grown by metal organic …
mobility transistor (HEMT). The epitaxial device heterostructure was grown by metal organic …
[HTML][HTML] Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures
There are three possible ways of reducing the charge density (ns) in the N-polar high
electron mobility transistors (HEMT) structures, by decreasing the channel thickness …
electron mobility transistors (HEMT) structures, by decreasing the channel thickness …
Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility …
Scaling down the channel-thickness (t ch) in GaN/(In, Al, Ga) N high-electron-mobility-
transistors (HEMTs) is essential to eliminating short-channel effects in sub 100 nm gate …
transistors (HEMTs) is essential to eliminating short-channel effects in sub 100 nm gate …
HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures
To further increase the operation frequency of GaN high electron mobility transistors
(HEMTs) with high power gain in the mm-wave band (30–300 GHz), channel thickness must …
(HEMTs) with high power gain in the mm-wave band (30–300 GHz), channel thickness must …
Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime
E Ahmadi, R Shivaraman, F Wu, S Wienecke… - Applied Physics …, 2014 - pubs.aip.org
The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by
scanning transmission electron microscopy and atom probe tomography. These layers were …
scanning transmission electron microscopy and atom probe tomography. These layers were …