Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

We report on the unambiguous detection of Auger electrons by electron emission
spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection …

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics
that are central in GaN light-emitting devices are not completely understood. We present first …

Wide-bandgap semiconductors such as Ga N∕ Al Ga N and Zn O∕ Mg Zn O quantum wells
are promising for improving the spectral reach and high-temperature performance of …

Since the invention of transistors, the flow of electrons has become controllable in solid-state
electronics. The flow of energy, however, remains elusive, and energy is readily dissipated …

The progress on anti‐Stokes photoluminescence and Stokes and anti‐Stokes Raman
scattering in GaN single crystals and GaN/AlN heterostructures is reviewed. Anti‐Stokes …

The lifetimes of polar optical phonons are known to affect both the electrical and thermal
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …

We investigated the infrared vibrational properties of pristine and Re-substituted MoS2
nanoparticles and analyzed the extracted phonon lifetimes in terms of multiple scattering …

Accumulation of non‐equilibrium longitudinal optical (LO) phonons (termed hot phonons) is
considered as a possible cause for limitation of hot‐electron drift velocity at high electric …

We present a method for measuring the mean free path and extracting the momentum
relaxation time of hot electrons in GaN using the hot electron transistor (HET). In this device …